DESCRIPTIONS
The MB85R256H is an FRAM (Ferroelectric Random Access Memory) chip in a configuration of 32,768 words x 8 bits, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells.
Unlike SRAM, MB85R256H is able to retain data without back-up battery.
The memory cells used for the MB85R256H has improved at least 1010 times of read/write access per bit, significantly outperforming FLASH memory and E2PROM in durability.
The MB85R256H uses a pseudo - SRAM interface compatible with conventional asynchronous SRAM.

FEATURES
• Bit configuration: 32,768 words x 8 bits
• Read/write durability: 1010 times/bit (Min)
• Peripheral circuit CMOS construction
• Operating power supply voltage: 2.7 V to 3.6 V
• Operating temperature range: −40 °C to +85 °C
• 28-pin, SOP flat package
• 28-pin, TSOP(1) flat package