DESCRIPTION
The FUJITSU MICROELECTRONICS MB82DBS08164D is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous Static Random Access Memory (SRAM) interface containing 134,217,728 storages accessible in a 16-bit format.
The MB82DBS08164D adopts asynchronous mode and synchronous burst mode for fast memory access as user configurable options.
The MB82DBS08164D is suited for mobile applications such as Cellular Handset and PDA.

* : FCRAM is a trademark of Fujitsu Microelectronics Limited, Japan

FEATURES
• Asynchronous SRAM Interface
• COSMORAM Revision 3 Compliance
   (COSMORAM : Common Specifications of Mobile RAM)
• Fast Access Time : tCE = 70 ns Max
• Burst Read/Write Access Capability :
   tCK = 13 ns Min /77 MHz Max
   tAC = 6 ns Max
• Low Voltage Operating Condition : VDD = 1.7 V to 1.95 V
• Wide Operating Temperature : TA = 0 °C to + 70 °C
• Byte Control by LB and UB
• Low-Power Consumption : IDDA1 = 35 mA Max
                                             IDDS1 = 200 μA Max (TA ≤ + 40 °C)
• Various Power Down mode : Sleep
                                                16 M-bit Partial
                                                32 M-bit Partial
                                                64 M-bit Partial