DESCRIPTION
The FUJITSU MB82DBS08164C is a CMOS Fast Cycle Random Access Memory (FCRAM*) with asynchronous Static Random Access Memory (SRAM) interface containing 134,217,728 storages accessible in a 16-bit format.
MB82DBS08164C is utilized using a FUJITSU advanced FCRAM core technology and improved integration in comparison to regular SRAM.
The MB82DBS08164C adopts asynchronous mode and synchronous burst mode for fast memory access as user configurable options.
This MB82DBS08164C is suited for mobile applications such as Cellular Handset and PDA.

* : FCRAM is a trademark of Fujitsu Limited, Japan

FEATURES
• Asynchronous SRAM Interface
• COSMORAM Revision 3 Compliance
   (COSMORAM : Common Specifications of Mobile RAM)
• Fast Access Time : tCE = 70 ns Max
• Burst Read/Write Access Capability :
   tCK = 9.5 ns Min /104 MHz Max
   tAC = 6 ns Max
• Low Voltage Operating Condition : VDD = 1.7 V to 1.95 V
• Wide Operating Temperature : TA = − 30 °C to + 85 °C
   Junction Temperature : TJ = − 30 °C to + 90 °C
• Byte Control by LB and UB
• Low-Power Consumption : IDDA1 = 40 mA Max
                                              IDDS1 = 300 µA Max
• Various Power Down mode : Sleep
                                                16 M-bit Partial
                                                32 M-bit Partial
                                                64 M-bit Partial
• Shipping Form : Wafer/Chip