GaN RF Power Products
Next generation high power RF semiconductor technology

   MACOM continues to develop industry-leading gallium nitride (GaN) RF power products. Our product portfolio leverages MACOM’s more than 60-year heritage of providing best-in-class standard, application specific and custom solutions for our radar, EW, ISM, and communications customers.

   As a member of the RF Energy Alliance, MACOM brings GaN technology into mainstream applications such as RF ignition systems, solid-state cooking, and high-lumen plasma lighting.

   MACOM GaN products are offered as unmatched transistors, internally matched power transistors, and fully matched power pallets and modules. Using high performance GaN HEMT processes and leveraging our proprietary die layout and assembly techniques, these products exhibit robust thermal properties and excellent RF performance with respect to power, gain, gain-flatness, efficiency, and ruggedness for applications up to 6 GHz.

   MACOM’s industry-leading portfolio of cost-effective RF power products uses our unique GaN on Silicon technology to deliver the cost, bandwidth, power density, and efficiency advantages of GaN in a variety of form factors— including 2 W to 600 W P1db CW power transistors in ceramic and overmolded plastic DFN and TO-272 packages, as well as HF through S-band modules and 50 Ω matched pallets. Our GaN on Silicon transistors and amplifiers improve upon the high power and efficiency performance of LDMOS while at the at the same time providing the high frequency performance of GaAs. Only MACOM delivers GaN performance at silicon cost structures to drive adoption.