Description
The MA4E2532-1113 Series SurMountTM Low and Medium Barrier, Silicon Schottky Ring Quad Diodes are fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, low loss, microstrip transmission medium. The combination of silicon and glass allows HMIC devices to have excellent loss and power dissipation characteristics in a low profile, reliable device.

FEATUREs
◾ Extremely Low Parasitic Capitance and Inductance
◾ Surface Mountable in Microwave Circuits, No
   Wirebonds Required
◾ Rugged HMIC Construction with Polyimide Scratch
   Protection
◾ Reliable, Multilayer Metalization with a Diffusion
   Barrier, 100% Stabilization Bake (300 °C, 16 hours)
◾ Lower Susceptibility to ESD Damage