DESCRIPTION
This is a family of 262144-word by 16-bit dynamic RAMs, fabricated with the high performance CMOS process, and is ideal for memory systems where high speed, low power dissipation, and low costs are essential.
The use of double-layer metalization process technology and a single-transistor dynamic storage stacked capacitor cell provide high circuit density at reduced costs. Multiplexed address inputs permit both a reduction in pins and an increase in system densities. Self or extended refresh current is small enough for battery back-up application.
This device has 2CAS and 1W terminals with a refresh cycle of 512 cycles every 8.2ms.

FEATURES
● Standard 40pin SOJ, 44 pin TSOP (II)
● Single 5V±10% supply
● Low stand-by power dissipation
   CMOS Input level - - - - - - - - - - - - - - - - - - 5.5mW (Max)
   CMOS Input level - - - - - - - - - - - - - - - - - - 550µW (Max) *
● Operating power dissipation
   M5M44260Cxx-5,-5S - - - - - - - - - - - - - - - - - 688mW (Max)
   M5M44260Cxx-6,-6S - - - - - - - - - - - - - - - - - 605mW (Max)
   M5M44260Cxx-7,-7S - - - - - - - - - - - - - - - - - 523mW (Max)
● Self refresh capability *
   Self refresh current - - - - - - - - - - - - - - - 150µA (Max)
● Extended refresh capability
   Extended refresh current - - - - - - - - - - - - - 150µA (Max)
● Fast-page mode (512-column random access), Read-modify-write,
   RAS-only refresh, CAS before RAS refresh, Hidden refresh
   capabilities.
● Early-write mode, LCAS / UCAS and OE to control output buffer impedance
● 512 refresh cycles every 8.2ms (A0~A8)
● 512 refresh cycles every 128ms (A0~A8) *
● Byte or word control for Read/Write operation (2CAS, 1W type)
   * : Applicable to self refresh version (M5M44260CJ,TP-5S,-6S,-7S : option) only

APPLICATION
   Microcomputer memory, Refresh memory for CRT