DESCRIPTION
M54587P and M54587FP are eight-circuit collector-current synchronized Darlington transistor arrays. The circuits are made of PNP and NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.

FEATURES
●High breakdown voltage (BVCEO ≥50V)
●High-current driving (IC(max)= 500mA)
●“L” active level input
●With input diode
●With clamping diodes
●Wide operating temperature range (Ta = –20 to +75°C)

APPLICATION
Interfaces between microcomputers and high-voltage, high current drive systems, drives of relays and MOS-bipolar logic IC interfaces