SUMMARY DESCRIPTION
The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/O pin down to 1.65V. An optional 12V VPP power supply is provided to speed up customer programming.

FEATURES SUMMARY
■ SUPPLY VOLTAGE
   – VDD = 2.7V to 3.6V Core Power Supply
   – VDDQ= 1.65V to 3.6V for Input/Output
   – VPP = 12V for fast Program (optional)
■ ACCESS TIME: 70, 85, 90,100ns
■ PROGRAMMING TIME:
   – 10µs typical
   – Double Word Programming Option
■ COMMON FLASH INTERFACE
   – 64 bit Security Code
■ MEMORY BLOCKS
   – Parameter Blocks (Top or Bottom location)
   – Main Blocks
■ BLOCK LOCKING
   – All blocks locked at Power Up
   – Any combination of blocks can be locked
   – WP for Block Lock-Down
■ SECURITY
   – 64 bit user Programmable OTP cells
   – 64 bit unique device identifier
   – One Parameter Block Permanently Lockable
■ AUTOMATIC STAND-BY MODE
■ PROGRAM and ERASE SUSPEND
■ 100,000 PROGRAM/ERASE CYCLES per BLOCK
■ ELECTRONIC SIGNATURE
   – Manufacturer Code: 20h
   – Top Device Code, M28W160ECT: 88CEh
   – Bottom Device Code, M28W160ECB: 88CFh
■ PACKAGES
   – Compliant with Lead-Free Soldering Processes
   – Lead-Free Versions