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LY6225616 데이터시트 - Unspecified1

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LY6225616

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Unspecified1
Unspecified1 Unspecified1

[Lyontek Inc.]

GENERAL DESCRIPTION
The LY6225616 is a 4,194,304-bit low power CMOS static random access memory organized as 262,144 words by 16 bits. It is fabricated using very high performance, high reliability CMOS technology. Its standby current is stable within the range of operating temperature.


FEATURES
Fast access time : 45/55/70ns
Low power consumption:   
Operating current : 45/40/30mA (TYP.)
Standby current : 5μA@5V(TYP.) LL/SL version
                       3μA@3V(TYP.) SL version 
Single 4.5V ~ 5.5V power supply
All inputs and outputs TTL compatible
Fully static operation
Tri-state output
Data byte control : LB# (DQ0 ~ DQ7)
                         UB# (DQ8 ~ DQ15)
Data retention voltage : 1.5V (MIN.)
Green package available
Package : 44-pin 400 mil TSOP-II
            48-ball 6mm x 8mm TFBGA

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제조사
256K X 16 BIT LOW POWER CMOS SRAM
Utron Technology Inc
256K X 16 BIT LOW POWER CMOS SRAM
Utron Technology Inc
256K X 16 BIT LOW POWER CMOS SRAM
Utron Technology Inc
256K X 16 BIT LOW POWER CMOS SRAM
Utron Technology Inc
256K X 16 BIT LOW POWER CMOS SRAM
Utron Technology Inc
256K X 16 BIT LOW POWER CMOS SRAM
Utron Technology Inc
256K X 16 BIT LOW POWER CMOS SRAM
Utron Technology Inc
256K X 16 BIT LOW POWER CMOS SRAM
Utron Technology Inc
Very Low Power CMOS SRAM 256K X 16 bit ( Rev : 2006 )
Brilliance Semiconductor
Very Low Power CMOS SRAM 256K X 16 bit ( Rev : 2008 )
Brilliance Semiconductor

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