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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
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LX5511 데이터시트 - Microsemi Corporation

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LX5511

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Microsemi
Microsemi Corporation Microsemi

DESCRIPTION
The Microsemi LX5511 is a power amplifier that is optimized for WLAN applications in the 2.3GHz – 2.5GHz frequency range. The LX5511 Power Amplifier is implemented as a two stage monolithic microwave integrated circuit (MMIC) with active bias and output pre-matching.
The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). With a single low voltage supply of 3.3V 26dB power gain between 2.3-2.5GHz, at a low quiescent current of 90mA.


KEY FEATURES
■ Advanced InGaP HBT
■ 2.3-2.5GHz Operation
■ Single-Polarity 3.3V Supply
■ Quiescent Current 90mA
■ Power Gain 26 dB
■ Total Current 150mA for Pout=18 dBm OFDM
■ EVM<3 %, 2.4% Typical 54Mbps/64QAM
■ Small Footprint: 3x3mm2
■ Height 0.9mm


APPLICATIONS
■ IEEE 802.11b/g

 

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제조사
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InGaP HBT 2.4 – 2.5 GHz Power Amplifier ( Rev : 2003 )
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InGaP HBT 2.4 – 2.5 GHz Power Amplifier
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InGaP HBT 2.4 – 2.5 GHz Power Amplifier
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InGaP HBT 2.4 – 2.5 GHz Power Amplifier
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InGaP HBT 2.4 – 2.5 GHz Power Amplifier ( Rev : 2004 )
Microsemi Corporation
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
Microsemi Corporation
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
Microsemi Corporation
InGaP HBT 2.4 – 2.5 GHz Power Amplifier ( Rev : 2004 )
Microsemi Corporation

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