DESCRIPTION
The LX5510B is a power amplifier optimized for WLAN applications in the 2.4-2.5 GHz frequency range. The PA is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching.
The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). With a single supply of 3.3 volts and a low quiescent current of 70mA the power gain is 19dB 2.4 – 2.5GHz.

KEY FEATURES
◾ Advanced InGaP HBT
◾ 2.4 – 2.5GHz Operation
◾ Single-Polarity 3.3V Supply
◾ Low Quiescent Current ICQ ~70mA
◾ Power Gain ~19dB @ 2.45GHz and Pout = 19dBm
◾ Total Current 135mA for Pout = 19dBm @ 2.45GHz OFDM
◾ EVM ~ 3.0% for 64QAM / 54Mbps and Pout = 19dBm
◾ Small Footprint (3 x 3 mm2)
◾ Low Profile (0.9mm)

APPLICATIONS
◾ IEEE 802.11b/g