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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
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LX5510 데이터시트 - Microsemi Corporation

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부품명
LX5510

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  2003  

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9 Pages

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제조사
Microsemi
Microsemi Corporation Microsemi

DESCRIPTION
The LX5510 is a power amplifier optimized for WLAN applications in the 2.4-2.5 GHz frequency range. The PA is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching.
The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). With single low voltage supply of 3.3V 20 dB power gain between 2.4-2.5GHz, at a low quiescent current of 65mA.


KEY FEATURES
◾ Advanced InGaP HBT
◾ 2.4 – 2.5GHz Operation
◾ Single-Polarity 3.3V Supply
◾ Low Quiescent Current Icq ~65mA
◾ Power Gain ~20dB @ 2.45GHz and Pout = 19dBm
◾ Total Current 125mA for Pout = 19dBm @ 2.45GHz OFDM
◾ EVM ~ 3.0% for 64QAM / 54Mbps and Pout = 19dBm
◾ Small Footprint (3 x 3 mm2)
◾ Low Profile (0.9mm)


APPLICATIONS
◾ IEEE 802.11b/g

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부품명
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제조사
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
Microsemi Corporation
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
Microsemi Corporation
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
Microsemi Corporation
InGaP HBT 2.4 – 2.5 GHz Power Amplifier ( Rev : 2004 )
Microsemi Corporation
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
Microsemi Corporation
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
Microsemi Corporation
InGaP HBT 2.4 – 2.5 GHz Power Amplifier ( Rev : 2004 )
Microsemi Corporation
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
Microsemi Corporation
InGaP HBT 2.4 – 2.5 GHz Power Amplifier
Microsemi Corporation
InGaP HBT 2.4 - 2.5 GHz Power Amplifier Module
Microsemi Corporation

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