General Description
The LPM9017 is the P-channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, notebook computer power management and other battery powered circuits where high-side switching.

FEATUREs
■ -30V/-4A,RDS(ON)＜58mΩ(typ.)@VGS=-10V
■ -30V/-3.0A,RDS(ON)＜68mΩ(typ.)@VGS=-4.5V
■ Super high density cell design for extremely
   low RDS(ON)
■ SOT23 Package

APPLICATIONs
✧ Portable Media Players
✧ Cellular and Smart mobile phone
✧ LCD
✧ DSC Sensor
✧ Wireless Card