LNA2603F 데이터시트 - Panasonic Corporation
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LNA2603F
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Panasonic Corporation
GaAs Infrared Light Emitting Diode
For optical control systems
FEATUREs
● High-power output, high-efficiency : PO = 6 mW (typ.)
● Emitted light spectrum suited for silicon photodetectors :
λP = 940 nm (typ.)
● Long lifetime, high reliability
● Thin side-view type package
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