INTRODUCTION
Sharp’s LH28F004SU-Z1 4M Flash Memory is a revolutionary architecture which enables the design of truly mobile, high performance, personal computing and communication products. With innovative capabilities, 5 V single voltage operation and very high read/write performance, the LH28F004SU-Z1 is also the ideal choice for designing embedded mass storage flash memory systems.

FEATURES
• 512K × 8 Word Configuration
• 5 V Write/Erase Operation (5 V VPP)
    – No Requirement for DC/DC Converter to Write/Erase
• 100 ns Maximum Access Time
• 32 Independently Lockable Blocks (16K)
• 100,000 Erase Cycles per Block
• Automated Byte Write/Block Erase
    – Command User Interface
    – Status Register
    – RY»/BY» Status Output
• System Performance Enhancement
    – Erase Suspend for Read
    – Two-Byte Write
    – Full Chip Erase
• Data Protection
    – Hardware Erase/Write Lockout during Power Transitions
    – Software Erase/Write Lockout
• Independently Lockable for Write/Erase on Each Block (Lock Block and Protect Set/Reset)
• 5 µA (Typ.) ICC in CMOS Standby
• 0.2 µA (Typ.) Deep Power-Down
• State-of-the-Art 0.55 µm ETOX™ Flash Technology
• 40-pin, 1.2 mm × 10 mm × 20 mm TSOP (Type I) Package