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Roithner LaserTechnik GmbH
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Mid-Infrared LED, Flip-Chip Design, SMD
Light Emitting Diodes with central wavelength 3.40 µm series are based on heterostructures grown on InAs substrates by MOCVD. InAsSb is used in the active layer. Wide band gap solid solutions InAsSbP with P content 50% are used for god electron confinement.
LED34FC-SMD5 has a stable ouput power and a lifetime more then 80000 hours.
FEATUREs
• Structure: InAsSb/InAsSbP
• Peak Wavelength: typ. 3.40 µm
• Optical Ouput Power: typ. 35 µW qCW
• Package: SMD 5x5 mm
Mid-Infrared LED, Flip-Chip Design, SMD
Roithner LaserTechnik GmbH
Mid-Infrared LED, Flip-Chip Design, SMD
Roithner LaserTechnik GmbH
Mid-Infrared LED, Flip-Chip Design, SMD
Roithner LaserTechnik GmbH
Mid-Infrared LED, Flip-Chip Design, SMD
Roithner LaserTechnik GmbH
Mid-Infrared LED, Flip-Chip Design, SMD
Roithner LaserTechnik GmbH
Mid-Infrared LED, Flip-Chip Design, SMD
Roithner LaserTechnik GmbH
Mid-Infrared LED, Flip-Chip Design, SMD
Roithner LaserTechnik GmbH
Mid-Infrared Light Emitting Diode, Flip-Chip Design
Roithner LaserTechnik GmbH
Mid-Infrared Light Emitting Diode, Flip-Chip Design
Roithner LaserTechnik GmbH
Mid-Infrared Light Emitting Diode, Flip-Chip Design
Roithner LaserTechnik GmbH