Product Description
The LE28DW8102T consists of two memory banks, 2 each 256K x 16 bits sector mode flash EEPROM manufactured with SANYOs proprietary, high performance FlashTechnology. The LE28DW8102T writes with a 3.0-volt-only power supply.

FEATURES:
• Single 3.0-Volt Read and Write Operations
• Separate Memory Banks by Address Space
   – Simultaneous Read and Write Capability
• Superior Reliability
   – Endurance: 10,000 Cycles
   – Data Retention: 10 years
• Low Power Consumption
   – Active Current, Read: 10 mA (typical)
   – Active Current, Read & Write: 30 mA (typical)
   – Standby Current: 5µA (typical)
   – Auto Low Power Mode Current: 5µA (typical)
• Fast Write Operation
   – Bank Erase + Program: 4.5 sec (typical)
   – Block Erase + Program: 500 ms (typical)
   – Sector Erase + Program: 30 ms (typical)
• Fixed Erase, Program, Write Times
   – Does not change after cycling
• Read Access Time
   – 80/90 ns
• Latched Address and Data
• End of Write Detection
   – Toggle Bit
   – Data # Polling
• Flash Bank: Two Small Erase Element Sizes
   – 1K Words per Sector or 32K Words per Block
   – Erase either element before Word Program
• CMOS I/O Compatibility
• Packages Available
   – 48-Pin TSOP
• Continuous Hardware and Software Data
   Protection (SDP)