datasheetbank_Logo
전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
HOME  >>>  Samsung  >>> KM44H16130B-GY PDF

KM44H16130B-GY 데이터시트 - Samsung

KM44H16030B-GY image

부품명
KM44H16130B-GY

Other PDF
  no available.

PDF
DOWNLOAD     

page
49 Pages

File Size
620.7 kB

제조사
Samsung
Samsung Samsung

Key Features
Features
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Four banks operation
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• MRS cycle with address key programs
   -. Read latency 2, 2.5 (clock)
   -. Burst length (2, 4, 8)
   -. Burst type (sequential & interleave)
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
• Data I/O transactions on both edges of data strobe
• Edge aligned data output, center aligned data input
• LDM,UDM/DM for write masking only
• Auto & Self refresh
• 15.6us refresh interval
• Maximum burst refresh cycle : 8
• 66pin TSOP II package

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

부품명
상세내역
PDF
제조사
DDR SDRAM Specification Version 1.0
Samsung
DDR SDRAM Specification Version 1.0
Samsung
DDR SDRAM Specification Version 0.3
Samsung
512Mb D-die DDR SDRAM Specification
Samsung
256Mb F-die DDR SDRAM Specification
Samsung
512Mb G-die DDR SDRAM Specification
Samsung
512Mb F-die DDR SDRAM Specification
Samsung
512Mb C-die DDR SDRAM Specification
Samsung
DDR SDRAM SODIMM ( Rev : 2008 )
Micron Technology
16Mx72 DDR SDRAM
White Electronic Designs => Micro Semi

Share Link: GO URL

EnglishEnglish Chinese简体中文 Japanese日本語 Russianрусский Spanishespañol

All Rights Reserved© datasheetbank.com  [ Privacy Policy ] [ Request Datasheet ] [ Contact Us ]