The 1Gb DDR2 SDRAM is organized asa 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/sec/pin (DDR2-800) for general applications.

KEY FEATUREs
• JEDEC standard VDD= 1.8V ± 0.1V Power Supply
•VDDQ= 1.8V ± 0.1V
• 333MHz fCKfor 667Mb/sec/pin, 400MHz fCKfor 800Mb/sec/pin
• 8 Banks
• Posted CAS
• Programmable CASLatency: 3, 4, 5, 6
• Programmable Additive Latenc y: 0, 1, 2, 3, 4, 5
• Write Latency(WL) = Read Latency(RL) -1
• Burst Length: 4 , 8(Interleave/nibble sequential)
• Programmable Sequential / Interleave Burst Mode
• Bi-directional Differential Data-Strobe (Single-ended data-strobe is an optional feature)
• Off-Chip Driver(OCD) Impedance Adjustment
• On Die Termination
• Special Function Support
  - 50ohm ODT
  - High Temperature Self-Refresh rate enable
• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE <95 °C
• All of products are Lead-Free, Halogen-Free, and RoHS compliant