DESCRIPTION
The 2SK4178 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

FEATURES
• Low on-state resistance
   RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 30 A)
• Low gate to drain charge
   QGD = 3.7 nC TYP. (VDD = 15 V, ID = 30 A)
• 4.5 V drive available