K3561 데이터시트 - Toshiba
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K3561
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Toshiba
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.)
• High forward transfer admittance: |Yfs| = 6.5 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 500 V)
• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) ( Rev : 2006 )
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSVI) ( Rev : 2006 )
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π -MOSVI) ( Rev : 2005 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSVI) ( Rev : 2006 )
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) ( Rev : 2004 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) ( Rev : 2002 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) ( Rev : 2006 )
Toshiba
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