FIELD EFFECT TRANSISTOR SILICON N CHANNELMOS TYPE
RF POWER MOSFET FOR VHF−AND UHF−BAND POWER AMPLIFIER

(Note)The TOSHIBA products listed inthis document are intended for high frequency Power Amplifier of telecommunications equipment. These TOSHIBA products are neither intended nor warranted for any other use. Do not use these TOSHIBA products listed in this document except for high frequency Power Amplifier of telecommunications equipment.

• Output Power  : PO ≥7.5W
• Power Gain  : GP ≥11.7dB
• Drain Efficiency  : ηD ≥50%