Description
The K3010P(G) series consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements.

FEATUREs
Approvals:
• BSI: BS EN 41003, BS EN 60095 (BS 415), BS EN 60950 (BS 7002), Certificate number 7081 and 7402
• FIMKO (SETI): EN 60950, Certificate number 12398
• Underwriters Laboratory (UL) 1577 recognized, file number E-76222
• VDE 0884, Certificate number 94778

VDE 0884 related features:
• Rated impulse voltage (transient overvoltage) VIOTM = 6 kV peak
• Isolation test voltage (partial discharge test voltage) Vpd = 1.6 kV
• Rated isolation voltage (RMS includes DC) VIOWM = 600 VRMS (848 V peak)
• Rated recurring peak voltage (repetitive) VIORM = 600 VRMS
• Creepage current resistance according to VDE 0303/IEC 112
   Comparative Tracking Index: CTI = 275
• Thickness through insulation ≥ 0.75 mm

General features:
• Isolation materials according to UL 94-VO
• Pollution degree 2 (DIN/VDE 0110 resp. IEC 664)
• Climatic classification 55/100/21 (IEC 68 part 1)
• Special construction:
   Therefore, extra low coupling capacity of typical 0.2 pF, high Common Mode Rejection
• IFT offered in 3 groups
• Coupling System C

APPLICATIONs
Circuits for safe protective separation against electrical shock according to safety class II (reinforced isolation):
   • For appl. class I – IV at mains voltage ≤ 300 V
   • For appl. class I – III at mains voltage ≤ 600 V according to VDE 0884, table 2, suitable for:
Monitors, air conditioners, line switches, solid state relays, microwaves.