K2608 데이터시트 - ETC
부품명
K2608
Other PDF
no available.
PDF
page
6 Pages
File Size
399.9 kB
제조사
ETC
[TOSHIBA]
Switching Regulator Applications
● Low drain−source ON resistance : RDS (ON) = 1.9 Ω (typ.)
● High forward transfer admittance : |Yfs| = 3.8 S (typ.)
● Low leakage current : IDSS = 100 μA (max) (VDS = 640 V)
● Enhancement mode : Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
부품명
상세내역
PDF
제조사
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) ( Rev : 1998 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) ( Rev : 2006 )
Toshiba
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIII) ( Rev : 2009 )
Toshiba
Share Link: