Toshiba - K13A60D 데이터시트 PDF, 핀배열, 회로도

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K13A60D 데이터시트 - Toshiba

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K13A60D

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Silicon N-Channel MOS Type (π -MOSⅦ ) Field Effect Transistor

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Switching Regulator Applications

Power MOSFET (N-ch 500V

• Low drain-source ON-resistance: RDS (ON)= 0.33 Ω(typ.)

• High forward transfer admittance: |Yfs| = 6.5 S (typ.)

• Low leakage current: IDSS= 10 μA (max) (VDS= 600 V)

• Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

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