International Rectifier’s RAD-Hard HEXFETTM technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).

FEATUREs:
■ Single Event Effect (SEE) Hardened
■ Low RDS(on)
■ Low Total Gate Charge
■ Proton Tolerant
■ Simple Drive Requirements
■ Ease of Paralleling
■ Hermetically Sealed
■ Ceramic Package
■ Light Weight