J619(2002) 데이터시트 - Toshiba
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J619
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Toshiba
Switching Regulator and DC-DC Converter Applications
Motor Drive Applications
• 4-V gate drive
• Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.)
• High forward transfer admittance: |Yfs| = 7.7 S (typ.)
• Low leakage current: IDSS = -100 µA (max) (VDS = -100 V)
• Enhancement-model: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -1 mA)
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TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2−Π−MOSV) ( Rev : 1998 )
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV) ( Rev : 2002 )
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TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV) ( Rev : 2002 )
Toshiba
TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (L2−Π−MOSV) ( Rev : 1998 )
Toshiba
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