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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
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J462 데이터시트 - NEC => Renesas Technology

2SJ462 image

부품명
J462

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page
6 Pages

File Size
54.4 kB

제조사
NEC
NEC => Renesas Technology NEC

DESCRIPTION
The 2SJ462 is a switching device which can be driven directly by an IC operating at 3 V.
The 2SJ462 features a low on-state resistance and can be driven by a low voltage power source, so it is suitable for applications such as power management.


FEATURES
• Can be driven by a 2.5 V power source.
• New-type compact package.
   Has advantages of packages for small signals and for power
   transistors, and compensates those disadvantages.
• Low on-state resistance.
   RDS(ON) : 0.29 Ω MAX. @VGS = –2.5 V, ID = –0.5 A
   RDS(ON) : 0.19 Ω MAX. @VGS = –4.0 V, ID = –1.0 A


부품명
상세내역
PDF
제조사
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
NEC => Renesas Technology
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
NEC => Renesas Technology
P Channel Mos Type Field Effect Transistor For Ultra High Speed Switching
SANYO -> Panasonic
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
Renesas Electronics
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
NEC => Renesas Technology

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