PolarHT™ Power MOSFET

(Electrically Isolated Tab)

N-Channel Enhancement Mode
Avalanche Rated

FEATUREs
• International standard isolated
   packages
• UL recognized packages
• Silicon chip on Direct-Copper-Bond
   substrate
   - High power dissipation
   - Isolated mounting surface
   - 2500V electrical isolation
• Unclamped Inductive Switching (UIS)
   rated
• Low package inductance
   - easy to drive and to protect
• Fast intrinsic diode

Advantages
• Easy to mount
• Space savings
• High power density