PolarP™ Power MOSFET

P-Channel Enhancement Mode
Avalanche Rated

FEATUREs:
• International standard packages
• Fast intrinsic diode
• Dynamic dV/dt Rated
• Avalanche Rated
• Rugged PolarPTM process
• Low QG and Rds(on) characterization
• Low Drain-to-Tab capacitance
• Low package inductance
   - easy to drive and to protect

APPLICATIONs:
• Hight side switching
• Push-pull amplifiers
• DC Choppers
• Current regulators
• Automatic test equipment

Advantages:
• Low gate charge results in simple
   drive requirement
• Improved Gate, Avalanche and
   dynamic dV/dt ruggedness
• High power density
• Fast switching
• Easy to parallel