IXTH3N120 데이터시트 - IXYS CORPORATION
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IXTH3N120
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IXYS CORPORATION
High Voltage Power MOSFETs
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
FEATUREs
• International standard packages
• Low RDS (on)
• Rated for unclamped Inductive load
Switching (UIS)
• Molding epoxies meet UL 94 V-0
flammability classification
Advantages
• Easy to mount
• Space savings
• High power density
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