MegaMOS™ FET

N-Channel Enhancement Mode

FEATUREs
• International standard package
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Low package inductance (< 5 nH)
   - easy to drive and to protect
• Fast switching times

APPLICATIONs
• Switch-mode and resonant-mode power supplies
• Motor control
• Uninterruptible Power Supplies (UPS)
• DC choppers

Advantages
• Easy to mount with 1 screw
   (isolated mounting screw hole)
• Space savings
• High power density