HiPerFET™ Power MOSFETs ISOPLUS247™ Q-CLASS
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalance Rated, High dV/dt
Low Gate Charge and Capacitances
FEATUREs
• Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• IXYS advanced low Qg process
• Low gate charge and capacitances
- easier to drive
- faster switching
• Low drain to tab capacitance(<30pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Rated for Unclamped Inductive Load
Switching (UIS)
• Fast intrinsic Rectifier
APPLICATIONs
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode
power supplies
• DC choppers
• AC & DC motor control
Advantages
• Easy assembly
• Space savings
• High power density