(Electrically Isolated Back Surface)
N-Channel Enhancement Mode High dV/dt, Low trr, HDMOS™ Family

FEATUREs
Silicon chip on Direct-Copper-Bond substrate
-  High  power  dissipation
-  Isolated  mounting  surface
- 2500V electrical isolation

Low drain to tab capacitance(<35pF)
Low RDS (on)HDMOS™ process

Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS) rated

Fast  intrinsic  Rectifier

APPLICATIONs
DC-DC converters
Battery chargers
Switched-mode  and  resonant-mode
power  supplies
DC  choppers
AC motor control