(Electrically Isolated Back Surface)
N-Channel Enhancement Mode High dV/dt, Low trr, HDMOS™ Family

FEATUREs
• Silicon chip on Direct-Copper-Bond substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
• Low drain to tab capacitance(<50pF)
• Low RDS (on)HDMOS™ process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Fast intrinsic Rectifier

APPLICATIONs
• DC-DC converters
• Battery chargers
• Switched-mode and resonant-mode power supplies
• DC choppers
• AC motor control