N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg

FEATUREs
● Low gate charge
● International standard packages
● Epoxy meet UL 94 V-0, flammability classification
● Low RDS (on) HDMOSTM process
● Rugged polysilicon gate cell structure
● Avalanche energy and current rated
● Fast intrinsic Rectifier

Advantages
● Easy to mount
● Space savings
● High power density