ISL9N303AP3 데이터시트 - Fairchild Semiconductor
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ISL9N303AP3
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Fairchild Semiconductor
General Description
This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
FEATUREs
• Fast switching
• rDS(ON) = 0.0026Ω (Typ), VGS = 10V
• rDS(ON) = 0.004Ω (Typ), VGS = 4.5V
• Qg (Typ) = 61nC, VGS = 5V
• Qgd (Typ) = 17nC
• CISS (Typ) = 7000pF
APPLICATIONs
• DC/DC converters
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제조사
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