Rad Hard 40V Quad Precision Low Power Operational Amplifiers

The ISL70417SEH contains four very high precision amplifiers featuring the perfect combination of low noise vs power consumption. Low offset voltage, low IBIAScurrent and low temperature drift making them the ideal choice for applications requiring both high DC accuracy and AC performance.

FEATUREs
• Electrically Screened to DLA SMD# 5962-12228
• Low Input Offset Voltage . . . . . . . . . . . . . . . . . . ±110µV, Max.
• Superb Offset Temperature Coefficient . . . . . .  1µV/°C, Max.
• Input Bias Current. . . . . . . . . . . . . . . . . . . . . . . . . .  ±5nA, Max.
• Input Bias Current TC . . . . . . . . . . . . . . . . . . . . ±5pA/°C, Max.
•Low Current Consumption . . . . . . . . . . . . . . . . . . . . . . .  440µA
• Voltage Noise . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8nV/√Hz
• Wide Supply Range . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 40V
• Operating Temperature Range. . . . . . . . . . .-55°C to +125°C
• Radiation Environment
- SEL/SEB LETTH (VS= ±20V). . . . . . . . .  73.9 MeV•cm²/mg
- Total Dose, High Dose Rate . . . . . . . . . . . . . . .  300krad(Si)
- Total Dose, Low Dose Rate . . . . . . . . . . . . . . .100krad(Si) *
* Product capability established by initial characterization. The EH version is acceptance tested on a wafer by wafer basis to 50krad(Si) at low dose rate.

APPLICATIONs
• Precision Instrumentation
• Spectral Analysis Equipment
• Active Filter Blocks
• Thermocouples and RTD Reference Buffers
• Data Acquisition
• Power Supply Control