ISC13009S 데이터시트 - Inchange Semiconductor
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ISC13009S
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Inchange Semiconductor
DESCRIPTION
• High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
• Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
• Switching regulators
• Ultrasonic generators
• High frequency inverters
• General purpose power amplifiers
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