DESCRIPTION
TheISSIIS62WV51216ALL/ IS62WV51216BLL are high-speed, 8M bit static RAMs organized as 512K words by 16 bits. It is fabricated using ISSIs high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

FEATURES
• High-speed access time: 45ns, 55ns
• CMOS low power operation
    – 36 mW (typical) operating
    – 12 µW (typical) CMOS standby
• TTL compatible interface levels
• Single power supply
    – 1.65V--2.2V VDD (62WV51216ALL)
    – 2.5V--3.6V VDD (62WV51216BLL)
• Fully static operation: no clock or refresh required
• Three state outputs
• Data control for upper and lower bytes
• Industrial temperature available
• Lead-free available