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IS61VF25636A-7.5B3 데이터시트 - Integrated Silicon Solution

IS61LF25636A image

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IS61VF25636A-7.5B3

Other PDF
  2005  

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32 Pages

File Size
430.7 kB

제조사
ISSI
Integrated Silicon Solution ISSI

DESCRIPTION
The ISSI IS61LF/VF25636A,IS64LF25636AandIS61LF/VF51218A are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for communication and networking applications.


FEATURES
•  Internal self-timed write cycle
•  Individual Byte Write Control and Global Write
•  Clock controlled, registered address, data and control
•  Burst sequence control using MODE input
•  Three chip enable option for simple depth expansion and address pipelining
•  Common data inputs and data outputs
•  Auto Power-down during deselect
•  Single cycle deselect
•  Snooze MODE for reduced-power standby
•  JTAG Boundary Scan for PBGA package
•  Power Supply
    LF: Vdd 3.3V + 5%, Vddq 3.3V/2.5V + 5%
    VF: Vdd 2.5V + 5%, Vddq 2.5V + 5%
•  JEDEC 100-Pin TQFP, 119-pin PBGA, and 165-pin PBGA packages
•  Lead-free available
•  Automotive temperature available

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부품명
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제조사
64K x 36 SYNCHRONOUS FLOW-THROUGH STATIC RAM
Integrated Silicon Solution
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM ( Rev : 2004 )
Cypress Semiconductor
128K x 36 Synchronous Flow-Through 3.3V Cache RAM ( Rev : 2000 )
Cypress Semiconductor
18-Mbit (512K x 36/1M x 18) Flow-Through SRAM
Cypress Semiconductor
18-Mbit (512 K × 36/1 M × 18) Flow-Through SRAM ( Rev : 2013 )
Cypress Semiconductor
18 Mbit (512 K × 36/1 M × 18) Flow Through SRAM ( Rev : 2011 )
Cypress Semiconductor
128K x 36 Synchronous Flow-Through 3.3V Cache RAM
Cypress Semiconductor
256K x 36, 512K x 18 9 Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM
Unspecified
256K x 32, 256K x 36, 512K x 18 SYNCHRONOUS FLOW-THROUGH STATIC RAM ( Rev : 2002 )
Integrated Silicon Solution
36-Mbit (1 M × 36) Flow-Through SRAM ( Rev : 2013 )
Cypress Semiconductor

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