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IS61C256AH-20J 데이터시트 - Integrated Silicon Solution

IS61C256AH image

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IS61C256AH-20J

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8 Pages

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60.9 kB

제조사
ISSI
Integrated Silicon Solution ISSI

DESCRIPTION
The ISSIIS61C256AH is a very high-speed, low power, 32,768 word by 8-bit static RAMs. They are fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 10 ns maximum.


FEATURES
• High-speed access time: 10, 12, 15, 20, 25 ns
• Low active power: 400 mW (typical)
• Low standby power
— 250 µW (typical) CMOS standby
— 55 mW (typical) TTL standby
• Fully static operation: no clock or refresh required
• TTL compatible inputs and outputs
• Single 5V power supply

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상세내역
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제조사
32K x 8 HIGH-SPEED CMOS STATIC RAM
Integrated Silicon Solution
32K x 8 HIGH SPEED CMOS STATIC RAM
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Taiwan Memory Technology
32K X 8 HIGH SPEED CMOS STATIC RAM ( Rev : 2001 )
Taiwan Memory Technology
32K x 8 HIGH SPEED CMOS STATIC RAM
Winbond
32K x 8 HIGH SPEED CMOS STATIC RAM
Mosel Vitelic, Corp
32K X 8 HIGH SPEED CMOS STATIC RAM
Taiwan Memory Technology
32K X 8 HIGH SPEED CMOS STATIC RAM
Taiwan Memory Technology
HIGH SPEED 32K x 8 STATIC CMOS RAM
Semiconductor Corporation
HIGH SPEED 32K x 8 STATIC CMOS RAM
Performance Semiconductor

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