제조사
Integrated Device Technology
FEATURES
• Clock frequency: 200, 166, 143, 133 MHz
• Fully synchronous; all signals referenced to a positive clock edge
• Internal bank for hiding row access/precharge
• Single 3.3V power supply
• LVTTL interface
• Programmable burst length: (1, 2, 4, 8, full page)
• Programmable burst sequence: Sequential/Interleave
• Self refresh modes
• 4096 refresh cycles every 16ms (A2 grade) or 64ms (Commercia, Industrial, A1 grade)
• Random column address every clock cycle
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
Integrated Silicon Solution
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
Integrated Silicon Solution
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
Integrated Silicon Solution
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
Integrated Silicon Solution
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
Integrated Silicon Solution
512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
Integrated Silicon Solution
512K Words x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
Integrated Circuit Systems
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
Integrated Silicon Solution
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
Integrated Silicon Solution
1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
Integrated Silicon Solution