Description
Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switchingm ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

● Dynamic dv/dt Rating
● Logic-Level Gate Drive
● RDS(on) Specified at VGS=4V & 5V
● 175℃ Operating Temperature
● Fast Switching
● Ease of Paralleling
● Simple Drive Requirements