VDS (V) 200 V
RDS(on) (Ω) VGS = 5 V 0.40
Qg (Max.) (nC) 40
Qgs (nC) 5.5
Qgd (nC) 24
Configuration Single

DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Logic Level Gate Drive
• RDS(on) Specified at VGS = 4 V and 5 V
• 150 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Lead (Pb)-free Available