N-CHANNEL SINGLE EVENT EFFECT (SEE) RAD HARD
400 Volt, 0.20Ω, (SEE) RAD HARD HEXFET

International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD HEXFETs retain identical electrical specifications up to 1 x 105 Rads (Si) total dose. No compensation in gate drive circuitry is required. These devices are also capable of surviving transient ionization pulses as high as 1 x 1012 Rads (Si)/Sec, and return to normal operation within a few microseconds. Since the SEE process utilizes International Rectifier’s patented HEXFET technology, the user can expect the highest quality and reliability in the industry.

FEATUREs:
◾ Radiation Hardened up to 1 x 105 Rads (Si)
◾ Single Event Burnout (SEB) Hardened
◾ Single Event Gate Rupture (SEGR) Hardened
◾ Gamma Dot (Flash X-Ray) Hardened
◾ Neutron Tolerant
◾ Identical Pre- and Post-Electrical Test Conditions
◾ Repetitive Avalanche Rating
◾ Dynamic dv/dt Rating
◾ Simple Drive Requirements
◾ Ease of Paralleling
◾ Hermetically Sealed
◾ Surface Mount
◾ Lightweight