IRG4BC30K-SPBF 데이터시트 - International Rectifier
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IRG4BC30K-SPBF
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International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR Short Ciruit Rated UltraFast IGBT
FEATUREs
• High short circuit rating optimized for motor control
tsc = 10 μs, @360V VCE(start), TJ = 125 °C
VGE = 15V
• Conbines low conduction losses with high
switching speed
• Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
• Lead-Free
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제조사
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT
International Rectifier
Short Circuit Rated UltraFast IGBT(INSULATED GATE BIPOLAR TRANSISTOR)
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT ( Rev : 2004 )
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT ( Rev : 2007 )
International Rectifier
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT
International Rectifier
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