INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

FEATUREs
• UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200kHz in resonant mode
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3
• IGBT co-packaged with HEXFRED^TM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard D2Pak package

Benefits
• Generation 4 IGBTs offers highest efficiencies available
• Optimized for specific application conditions
• HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require less/no snubbing
• Designed to be a "drop-in" replacement for equivalent industry-standard Generation 3 IR IGBTs