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전자부품 반도체 검색엔진( 무료 PDF 다운로드 ) - 데이터시트뱅크
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IRG4BC20SD 데이터시트 - International Rectifier

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IRG4BC20SD

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10 Pages

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236.8 kB

제조사
IR
International Rectifier IR

Features
• Extremely low voltage drop 1.4Vtyp. @ 10A
• S-Series: Minimizes power dissipation at up to 3 KHz PWM frequency in inverter drives, up to 4 KHz in brushless DC drives.
• Very Tight Vce(on) distribution
• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations
• Industry standard TO-220AB package


Benefits
• Generation 4 IGBTs offer highest efficiencies available
• IGBTs optimized for specific application conditions
• HEXFRED diodes optimized for performance with IGBTs . Minimized recovery characteristics require less/no snubbing
• Lower losses than MOSFETs conduction and Diode losses

 

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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
International Rectifier
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International Rectifier

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