Description
Stripe Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this MOSFET are a 175^oC junction operating temperature, fast switching speed and improved ruggedness in single and repetitive avalanche.

Benefits
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax

Typical Applications
Industrial Motor Drive